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See Technical Specifications

FDMC86520L +BOM

MOSFET with MO-229 package design

Manufacturer:

Onsemi
Mfr.Part #:

FDMC86520L
Datasheet:

FDMC86520L Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMC86520L

FDMC86520L General Description

When it comes to power management, the FDMC86520L N-Channel MOSFET stands out for its impressive capabilities. Designed with a keen eye on efficiency, this component offers low gate charge, low rDS(on), and fast switching speed, making it a standout choice for those looking to enhance the performance of their DC/DC converters. Its optimized design ensures minimal power losses and maximum reliability, making it an essential component for various power supply applications

Key Features

Advanced sensor technology detects movement and adjusts settings
Sleek and modern design fits seamlessly with any décor
Eco-friendly design reduces waste and minimizes environmental impact

Application

High-quality sound system
Ultra-lightweight laptop
Customized workout plan

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	13.5 A	Rds On - Drain-Source Resistance	6.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.7 V
Qg - Gate Charge	45 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.3 W
Channel Mode	Enhancement	Series	FDMC86520L
Configuration	Single	Fall Time	3.4 ns
Forward Transconductance - Min	49 S	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	5.2 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	3.3 mm	Unit Weight	0.005832 oz