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FDMS2672 +BOM

Silicon N-Channel MOSFET with 200V Voltage Rating and 3.7A Drain Current, Packaged in 8-Pin Power 56 EP, Available in Tape and Reel

Manufacturer:

Onsemi
Mfr.Part #:

FDMS2672
Datasheet:

FDMS2672 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDMS2672

FDMS2672 General Description

The FDMS2672 product, part of the UltraFET series, is engineered to deliver benchmark efficiency in power conversion applications. Its characteristics are specifically optimized for r_DS(on), ESR, total gate charge, and Miller gate charge, making it an ideal choice for high frequency DC to DC converters. With its focus on efficiency and performance, this device is well-suited for advanced power designs that demand superior capabilities

Key Features

High power density
Low noise operation
Fast response time

Application

Great for all your needs
Perfect for any task
Versatile and reliable

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	20 A	Rds On - Drain-Source Resistance	77 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	42 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	UltraFET
Series	FDMS2672	Configuration	Single
Fall Time	10 ns	Forward Transconductance - Min	14 S
Height	0.8 mm	Length	6 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	36 ns
Typical Turn-On Delay Time	22 ns	Width	5 mm
Unit Weight	0.007408 oz