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FDMS3604S +BOM

30V-rated MOSFET with a low on-resistance of 0.0068ohm, ideal for power management circuits

FDMS3604S General Description

Elevate your power electronics designs with the FDMS3604S, a revolutionary product that redefines efficiency and performance in the industry. Featuring dual specialized N-Channel MOSFETs in a compact PQFN package, this device offers unparalleled versatility and ease of integration for various applications. The internal connection of the switch node enables seamless placement and routing of synchronous buck converters, simplifying the design process and reducing time-to-market. With the control MOSFET (Q1) and synchronousSyncFET (Q2) delivering optimized power efficiency, the FDMS3604S is a must-have component for engineers looking to maximize the performance of their systems

Key Features

  • Rise/fall time reduction
  • Inherent noise immunity
  • High-speed switching capability

Application

  • Sleek
  • Stylish
  • Compact

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 13 A, 23 A
Rds On - Drain-Source Resistance 2.2 mOhms, 5.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.7 V, 3 V Qg - Gate Charge 21 nC, 47 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.2 W, 2.5 W Channel Mode Enhancement
Tradename Power Stage PowerTrench Series FDMS3604S
Configuration Dual Fall Time 2.2 ns, 3.4 ns
Forward Transconductance - Min 61 S, 130 S Height 1.1 mm
Length 6 mm Product Type MOSFET
Rise Time 2.5 ns, 4.8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 20 ns, 31 ns Typical Turn-On Delay Time 8.2 ns, 13 ns
Width 5 mm Unit Weight 0.006032 oz

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