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See Technical Specifications

FDMS3620S +BOM

Mosfet Array 25V 17.5A, 38A 1W Surface Mount Power56

Manufacturer:

onsemi
Mfr.Part #:

FDMS3620S
Datasheet:

FDMS3620S Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDMS3620S

FDMS3620S General Description

Unleash the potential of your synchronous buck converters with the FDMS3620S, featuring two specialized N-Channel MOSFETs in a dual PQFN package. The internally connected switch node simplifies placement and routing, while the meticulously designed control MOSFET (Q1) and synchronousSyncFET (Q2) guarantee optimal power efficiency for maximum productivity

Key Features

Advanced driver architecture reduces switching losses
High-side N-channel MOSFET for low-loss operation
Low capacitance and high frequency operation

Application

Mouse
Keyboard
Monitor

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	38 A	Rds On - Drain-Source Resistance	5.5 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	800 mV, 1.1 V
Qg - Gate Charge	26 nC, 106 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDMS3620S	Configuration	Dual
Height	1.1 mm	Length	6 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Width	5 mm	Unit Weight	0.003175 oz
Source Content uid	FDMS3620S	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Case Connection	DRAIN SOURCE
DS Breakdown Voltage-Min	25 V	Drain Current-Max (Abs) (ID)	49 A
Drain Current-Max (ID)	17.5 A	Drain-source On Resistance-Max	0.0047 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-N6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.5 W	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON