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FDMS3660S +BOM
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
PQFN-8-
Manufacturer:
onsemi
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Mfr.Part #:
FDMS3660S
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDMS3660S, guaranteed quotes back within 12hr.
Availability: 7072 PCS
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FDMS3660S General Description
Meet the FDMS3660S, a cutting-edge device engineered to perfection. Boasting two specialized N-Channel MOSFETs housed in a dual PQFN package, this marvel of engineering revolutionizes the world of synchronous buck converters. Its internally connected switch node simplifies installation and routing, saving valuable time and effort during design implementation. Crafted with precision, the control MOSFET (Q1) and synchronousSyncFET (Q2) are finely tuned to deliver unparalleled power efficiency, setting new standards in performance and reliability. From consumer electronics to automotive systems, the FDMS3660S stands as a testament to innovation and excellence
Key Features
- Q1: N-Channel
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A - Q2: N-Channel
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant
Application
- Notebook PC
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 13 A, 30 A | Rds On - Drain-Source Resistance | 8 mOhms, 1.8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V, - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Qg - Gate Charge | 29 nC, 87 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.2 W, 2.5 W |
Channel Mode | Enhancement | Tradename | Power Stage PowerTrench |
Series | FDMS3660S | Configuration | Dual |
Height | 1.1 mm | Length | 6 mm |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Width | 5 mm | Unit Weight | 0.006032 oz |
Source Content uid | FDMS3660S | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 34 Weeks |
Case Connection | DRAIN SOURCE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 60 A | Drain Current-Max (ID) | 13 A |
Drain-source On Resistance-Max | 0.008 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 70 pF | JEDEC-95 Code | MO-240AA |
JESD-30 Code | R-PDSO-F6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 2.5 W |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | FLAT | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.145 | $1.14 |
10+ | $0.990 | $9.90 |
30+ | $0.905 | $27.15 |
100+ | $0.808 | $80.80 |
500+ | $0.766 | $383.00 |
1000+ | $0.746 | $746.00 |
The prices below are for reference only.
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