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FDMS3664S +BOM

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

FDMS3664S X-Ray Inspection

X-Ray inspection ensures product integrity by detecting internal defects without damaging external packaging. It reduces failure rates and enhances production efficiency, making it indispensable in the electronics components industry.

FDMS3664S

FDMS3664S General Description

Featuring a dual PQFN package, the FDMS3664S product is equipped with two specialized N-Channel MOSFETs that have been intricately crafted for peak performance. The internally connected switch node allows for effortless placement and routing in synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been specifically designed to ensure unparalleled power efficiency

Key Features

  • Fast switching and low losses for efficient power conversion
  • Compact layout reduces electromagnetic interference
  • MOSFET integration minimizes node ringing noise
  • Rise/fall times shortened for reduced switching losses
  • Latch-up protection for enhanced reliability
  • Safe operating area ensures stable operation

Application

  • Desktop

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 13 A, 25 A
Rds On - Drain-Source Resistance 8 mOhms, 2.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V, - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.1 V Qg - Gate Charge 29 nC, 52 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.2 W, 2.5 W Channel Mode Enhancement
Tradename Power Stage PowerTrench Series FDMS3664S
Configuration Dual Height 1.1 mm
Length 6 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Width 5 mm
Unit Weight 0.006032 oz

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