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Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
QFN8Manufacturer:
FAILCHILD
Mfr.Part #:
FDMS3664S
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
EDA/CAD Models:
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X-Ray inspection ensures product integrity by detecting internal defects without damaging external packaging. It reduces failure rates and enhances production efficiency, making it indispensable in the electronics components industry.
Featuring a dual PQFN package, the FDMS3664S product is equipped with two specialized N-Channel MOSFETs that have been intricately crafted for peak performance. The internally connected switch node allows for effortless placement and routing in synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been specifically designed to ensure unparalleled power efficiency
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 13 A, 25 A |
Rds On - Drain-Source Resistance | 8 mOhms, 2.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V, - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.1 V | Qg - Gate Charge | 29 nC, 52 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.2 W, 2.5 W | Channel Mode | Enhancement |
Tradename | Power Stage PowerTrench | Series | FDMS3664S |
Configuration | Dual | Height | 1.1 mm |
Length | 6 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Width | 5 mm |
Unit Weight | 0.006032 oz |
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