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FDMS3668S +BOM

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Manufacturer:

onsemi
Mfr.Part #:

FDMS3668S
Datasheet:

FDMS3668S Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDMS3668S

FDMS3668S General Description

The FDMS3668S is a specialized device featuring two N-Channel MOSFETs in a dual PQFN package. Its switch node has been internally connected to allow for convenient placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) are specifically designed to deliver optimal power efficiency, making this device an ideal choice for applications requiring high performance and reliable power management

Key Features

Q1: N-Channel
Max r_DS(on) = 8 mΩ at V_GS = 10 V, I_D = 13 A
Max r_DS(on) = 11 mΩ at V_GS = 4.5 V, I_D = 11 A
Q2: N-Channel
Max r_DS(on) = 5 mΩ at V_GS = 10 V, I_D = 18 A
Max r_DS(on) = 5.2 mΩ at V_GS = 4.5 V, I_D = 17 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing
RoHS Compliant

Application

Notebook PC

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	13 A, 18 A	Rds On - Drain-Source Resistance	8 mOhms, 5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V, - 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.1 V
Qg - Gate Charge	29 nC, 38 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.2 W, 2.5 W
Channel Mode	Enhancement	Tradename	Power Stage PowerTrench
Series	FDMS3668S	Configuration	Dual
Height	1.1 mm	Length	6 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Width	5 mm	Unit Weight	0.006032 oz
Source Content uid	FDMS3668S	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Case Connection	DRAIN SOURCE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (Abs) (ID)	60 A	Drain Current-Max (ID)	13 A
Drain-source On Resistance-Max	0.008 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	70 pF	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2.5 W
Surface Mount	YES	Terminal Finish	Tin (Sn)
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON