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FDMS5352 +BOM

This N-Channel Power Trench MOSFET is designed for high-performance applications

Manufacturer:

Onsemi
Mfr.Part #:

FDMS5352
Datasheet:

FDMS5352 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDMS5352

FDMS5352 General Description

Using an innovative Power Trench^® process, the FDMS5352 N-Channel MOSFET sets a new standard in power management. By minimizing on-state resistance without compromising on switching performance, this MOSFET offers unparalleled efficiency and reliability in diverse applications. Its robust design and advanced features make it a standout choice for engineers looking for a high-performance solution to meet their power management needs

Key Features

Low noise and high reliability
High-efficiency and compact design
Magnetic field sensing accuracy guaranteed
Compact size, high-performance, low-power
Reliable and durable, long-term usage
Fast response time and high sensitivity

Application

This option is versatile and user-friendly.
Great for a variety of tasks.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	13.6 A
Rds On - Drain-Source Resistance	6.7 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	131 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDMS5352
Configuration	Single	Fall Time	7 ns
Height	1.1 mm	Length	6 mm
Product Type	MOSFET	Rise Time	11 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	58 ns
Typical Turn-On Delay Time	19 ns	Width	5 mm
Unit Weight	0.002402 oz