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FDMS86202ET120 +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS86202ET120
Datasheet:

FDMS86202ET120 Datasheet (PDF)
Series:

PowerTrench®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

120 V
EDA/CAD Models:

Request Free CAD Models for FDMS86202ET120

FDMS86202ET120 General Description

This N-Channel MOSFET, part of the FDMS86202ET120 series, is a high-quality semiconductor device engineered using the state-of-the-art PowerTrench process. By integrating Shielded Gate technology, this MOSFET offers reduced on-state resistance while maintaining excellent switching performance. With a focus on optimization and reliability, this device is well-suited for demanding power applications

Key Features

Silicon-based MOSFET technology
Robust package design ensures reliability
Low on-resistance for efficient switching

High-speed switching capability
Compact and lightweight construction

Application

Durable and perfect for your needs.
An essential product for any task.

Specifications

Series	PowerTrench®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta), 102A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4585 pF @ 60 V	Power Dissipation (Max)	3.3W (Ta), 187W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	FDMS86202