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Dual N-Channel PowerTrench® MOSFET 30V
8-PowerWDFNManufacturer:
onsemi
Mfr.Part #:
FDMS9600S
Datasheet:
Series:
PowerTrench®
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
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The FDMS9600S is a top-tier device featuring two specially crafted MOSFETs housed in a dual Power 56 package. This exceptional design ensures maximum efficiency and superb utilization of the PCB space, making it an ideal choice for Synchronous Buck power stages. The high-side MOSFET boasts minimal switching loss, while the low-side SyncFET™ offers reduced conduction loss. Together, they form a powerful duo that delivers unrivaled performance in power management applications
Series | PowerTrench® | Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 12A, 16A |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 12A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 15V |
Power - Max | 1W | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | FDMS9600 |
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