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See Technical Specifications

FDMT80060DC +BOM

Channel Transistor, 60V, 292A, 8-Pin Package

Manufacturer:

Onsemi
Mfr.Part #:

FDMT80060DC
Datasheet:

FDMT80060DC Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

FDMT80060DC General Description

The FDMT80060DC is an N-Channel MOSFET manufactured using Fairchild Semiconductor’s state-of-the-art PowerTrench® process. This advanced technology allows for the lowest rDS(on) while ensuring exceptional switching performance. The integration of silicon and Dual CoolTM package technologies further enhances its efficiency, making it an ideal choice for various applications

Key Features

Compact design for space savings
Ultra-low r_DS(on) for efficient switching
Advanced Silicon material for high reliability
Soft recovery body diode for reduced ringing
High current handling up to 43A for demanding apps
RoHS compliant for environmentally friendly use

Application

Noise Reduction Technology
Smart Power Management
High Efficiency MOSFETs

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	43 A
Rds On - Drain-Source Resistance	1.1 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V	Qg - Gate Charge	170 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	156 W	Channel Mode	Enhancement
Tradename	PowerTrench	Series	FDMT80060DC
Configuration	Single	Fall Time	19 ns
Forward Transconductance - Min	134 S	Height	0.8 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	47 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	66 ns	Typical Turn-On Delay Time	75 ns
Width	3.3 mm	Unit Weight	0.008766 oz