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See Technical Specifications

FDN338P +BOM

SOT-23 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDN338P
Datasheet:

FDN338P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN338P

FDN338P General Description

The FDN338P MOSFET is a reliable component for power management in battery-operated devices. Utilizing a cutting-edge PowerTrench process, this P-Channel MOSFET is specifically designed for low voltage applications, making it ideal for portable electronics where battery efficiency is crucial. Its 2.5V specification ensures compatibility with a wide range of devices, providing a versatile solution for various power management needs

Key Features

R_DS(ON): 110 mΩ @ VGS = –3.5 V
–2 A, –15 V, low input capacitance
Fast switching speed with high reliability
Low R_DS(ON), high current handling capability
SuperSOT™ -3 provides 30% higher power handling than SOT23
R_DSON: 90 mΩ @ VGS = –5.5 V, low input capacitance

Application

Integrated Circuit
High Performance
Temperature Sensing

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.6 A	Rds On - Drain-Source Resistance	115 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	6.2 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN338P	Configuration	Single
Fall Time	11 ns	Forward Transconductance - Min	6 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	16 ns
Typical Turn-On Delay Time	10 ns	Width	1.4 mm
Part # Aliases	FDN338P_NL	Unit Weight	0.001058 oz