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See Technical Specifications

FDN339AN +BOM

High-power switching device for reliable performance

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDN339AN
Datasheet:

FDN339AN Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDN339AN

FDN339AN General Description

The FDN339AN product is a high-performance N-Channel MOSFET designed for maximum efficiency and superior switching performance. It features a low on-state resistance and low gate charge, making it an ideal choice for various applications where precision and reliability are paramount. With a 2.5V specified voltage, this MOSFET is perfect for use in modern electronic devices that demand high levels of performance and energy efficiency

Key Features

Small signal behavior compatible with CMOS circuits.
Very low input current (5μA typical).
R_DS(ON) = 0.035 Ω @ V_GS = 8.5 V.
High immunity to electromagnetic interference.
Pulse energy capability up to 100mJ.
Low radiation hardness (1% typical).

Application

Wide compatibility
Low energy consumption
Long lifespan

Specifications

Source Content uid	FDN339AN	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	71 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	3 A	Drain-source On Resistance-Max	0.035 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.5 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON