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FDN360P +BOM

FDN360P is a PowerTrench MOSFET with a P-Channel design, packaged in a 3000-REEL format

FDN360P General Description

The FDN360P MOSFET sets a new standard in power efficiency and switching performance with its innovative design and advanced manufacturing process. Created by Fairchild Semiconductor, these P-Channel Logic Level MOSFETs are perfect for applications requiring low voltage and battery power. By minimizing on-state resistance and optimizing gate charge, the FDN360P offers exceptional efficiency and speed, making it an ideal choice for a variety of electronic devices

Key Features

  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low Gate Charge (6.2nC typical)
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Application

  • Consumer Electronics
  • Energy Efficient Designs
  • Medical Devices

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2 A Rds On - Drain-Source Resistance 63 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDN360P Configuration Single
Fall Time 13 ns Forward Transconductance - Min 5 S
Height 1.12 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 6 ns Width 1.4 mm
Part # Aliases FDN360P_NL Unit Weight 0.001058 oz

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