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See Technical Specifications

FDN361BN +BOM

N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDN361BN
Datasheet:

FDN361BN Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Additional Feature:

FAST SWITCHING
EDA/CAD Models:

Request Free CAD Models for FDN361BN

FDN361BN General Description

Product FDN361BN is a top-of-the-line N-Channel Logic Level MOSFET that boasts outstanding performance in low voltage applications. Designed using the advanced PowerTrench process, these MOSFETs are crafted to minimize on-state resistance while delivering superior switching capabilities

Key Features

Compact Design, High Efficiency
R_DS(ON) = 4.2 mΩ @ V_GS = 15 V
Low R_DSON, Fast Switching Time
Ultra-High Current Density, Low ESR
Suitable for High-Power Applications, Low Saturation Voltage
Fast Frequency Response, Very Low Quiescent Current

Application

Quick and easy setup
Durable construction
Energy efficient

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Additional Feature	FAST SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	1.4 A
Drain-source On Resistance-Max	0.11 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	23 pF	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Qualification Status	COMMERCIAL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON