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FDP6670AL +BOM

N-Channel 30 V 80A (Ta) 68W (Tc) Through Hole TO-220-3

FDP6670AL General Description

N-Channel 30 V 80A (Ta) 68W (Tc) Through Hole TO-220-3

Key Features

  • 80 A, 30 V
  • RDS(ON) = 6.5 mW @ VGS = 10 V
  • RDS(ON) = 8.5 mW @ VGS = 4.5 V
  • Critical DC electrical parameters specified at
  • elevated temperature
  • High performance trench technology for extremely
  • low RDS(ON)
  • 175°C maximum junction temperature rating

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code
Additional Feature LOGIC LEVEL COMPATIBLE Avalanche Energy Rating (Eas) 114 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 80 A Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) NOT APPLICABLE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 240 A Qualification Status COMMERCIAL
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE Transistor Application SWITCHING
Transistor Element Material SILICON

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