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FDS4435A +BOM

Compact P-Channel MOSFET Field-Effect Transistor, capable of handling 9A currents with a voltage rating of 30V

FDS4435A General Description

P-Channel 30 V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Key Features

  • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS = -10 V
  • RDS(ON) = 0.025 Ω @ VGS = -4.5 V
  • Low gate charge (21nC typical)
  • High performance trench technology for extremely
  • low RDS(ON)
  • High power and current handling capability

Specifications

Source Content uid FDS4435A Part Life Cycle Code End Of Life
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Date Of Intro 2017-11-07
Application SWITCHING Configuration SINGLE WITH BUILT-IN DIODE
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Surface Mount YES Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON

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In Stock: 4,603

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Qty. Unit Price Ext. Price
5+ $0.332 $1.66
50+ $0.267 $13.35
150+ $0.240 $36.00
500+ $0.196 $98.00
3000+ $0.180 $540.00
6000+ $0.170 $1,020.00

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