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FDS4897AC +BOM

PowerTrench MOSFET with both N and P-channels

FDS4897AC General Description

By utilizing advanced technology in the production of the FDS4897AC, it offers improved functionality and reliability compared to traditional MOSFETs. The PowerTrench® process allows for enhanced performance in terms of reduced resistance and enhanced switching capabilities. This results in a product that is not only efficient but also durable, providing long-lasting performance for a wide range of electronics applications

Key Features

  • Dual N-Channel MOSFET
  • P-Channel Power Transistor
  • Ultra Low On-Resistance
  • High Current Density Design
  • Advanced Package Technology
  • Reliable Electrostatic Discharge Protection

Application

  • Modern
  • Efficient
  • Powerful

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 6.1 A, 5.2 A Rds On - Drain-Source Resistance 26 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V, 3 V
Qg - Gate Charge 21 nC, 20 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS4897AC Configuration Dual
Fall Time 2 ns, 3 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 2 ns, 3 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 17 ns Typical Turn-On Delay Time 6 ns, 8 ns
Width 3.9 mm Unit Weight 0.006596 oz

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