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FDS4953 +BOM

Dual P-Channel MOSFET with -30V rating in SO-8 package

FDS4953 General Description

The FDS4953 P-channel MOSFET transistor is a versatile component that offers high-speed switching capabilities for a wide range of electronic circuits. With a drain-source voltage rating of 30V and a continuous drain current of 1.1A, it is well-suited for low to medium power applications. Its low on-resistance of 340mΩ at a gate voltage of -4.5V ensures efficient power handling, while the gate threshold voltage of -1.6V to -3.5V provides reliable turn-on and turn-off characteristics. The transistor's small package size and low capacitance contribute to its high-speed performance, making it ideal for applications requiring fast switching speeds. Design engineers can take advantage of its high efficiency and excellent thermal performance in power management circuits, battery protection circuits, and load switching applications

Key Features

  • Fast switching speed: 250 kHz
  • Low power consumption: 5.4W
  • Small input capacitance: 2.1nF

Application

  • Adjust LED brightness
  • Efficient motor control
  • Secure automotive systems

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 5 A Rds On - Drain-Source Resistance 55 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Series FDS4953
Configuration Dual Fall Time 9 ns
Forward Transconductance - Min 10 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 13 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 P-Channel
Type MOSFET Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 7 ns Width 3.9 mm
Part # Aliases FDS4953_NL Unit Weight 0.006596 oz

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