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See Technical Specifications

FDS5170N7 +BOM

8-Pin FLMP SOIC Package

Manufacturer:

onsemi
Mfr.Part #:

FDS5170N7
Datasheet:

FDS5170N7 Datasheet (PDF)
Series:

PowerTrench®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

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FDS5170N7 General Description

Featuring a low on-resistance of 9.5mΩ, the FDS5170N7 excels in power management, effectively reducing power dissipation and enhancing energy efficiency. Its fast switching speed and low gate charge further contribute to its suitability for high-frequency applications, making it a versatile choice for advanced electronic systems

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	PowerTrench®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	12mOhm @ 10.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2889 pF @ 30 V
FET Feature	-	Power Dissipation (Max)	3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	FDS51