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FDS6900AS +BOM

Dual N-Channel PowerTrench® SyncFET™ 30V

FDS6900AS General Description

The FDS6900AS stands out as a versatile and efficient solution for improving power conversion processes in various electronic devices, especially those reliant on peripheral voltages like notebook computers. By leveraging the unique features of this integrated device, manufacturers can achieve significant gains in power efficiency and performance. The dual 30V N-channel PowerTrench MOSFETs play a crucial role in maximizing power conversion efficiency, with specific optimizations for reducing switching losses and conduction losses

Key Features

  • Simplified Architecture
    Enhanced Performance and Reliability
  • Real-Time Data Processing
    Advanced Analytics and Insights
  • Improved User Experience
    Ergonomic Design and Intuitive Interface
  • Faster Development Cycles
    Streamlined Workflow and Collaboration
  • Secure and Scalable Infrastructure
    Robust Data Protection and Storage
  • Increased Efficiency and Productivity
    Automated Workflows and Task Automation

Application

  • Useful in various situations.
  • Works well for multiple jobs.
  • Efficient and durable choice.

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 8 Reach Compliance Code
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.2 A Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Qualification Status COMMERCIAL
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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