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See Technical Specifications

FDS6975 +BOM

Dual P-Channel Logic Level PowerTrench® MOSFET -30V, -6A, 32mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDS6975
Datasheet:

FDS6975 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS6975

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDS6975 General Description

Product Description: 'Introducing the P-Channel Logic Level MOSFET FDS6975, a cutting-edge solution for notebook computer applications. This advanced PowerTrench device is designed to minimize on-state resistance while maintaining low gate charge, ensuring superior switching performance

Key Features

-6 A, -30 V
R_DS(ON) = 0.032 Ω @ V_GS = -10 V
R_DS(ON) = 0.045 Ω @ V_GS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low R_DS(ON).
High power and current handling capability.

Application

This product is general usage and suitable for many different applications.
Load Switch
Power Management
Battery Charging Circuit
DC/DC Converters

Specifications

Source Content uid	FDS6975	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	6 A
Drain-source On Resistance-Max	0.032 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	2 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON