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See Technical Specifications

FDS8880 +BOM

30V 11.6A 10mΩ@10V,11.6A 2.5W 2.5V@250uA N Channel SOIC-8 MOSFETs ROHS

Manufacturer:

Onsemi
Mfr.Part #:

FDS8880
Datasheet:

FDS8880 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDS8880

FDS8880 General Description

When it comes to improving the performance of DC/DC converters, the FDS8880 N-Channel MOSFET is in a league of its own. This MOSFET is tailor-made for maximizing efficiency in systems utilizing synchronous or conventional switching PWM controllers. Its optimized design results in minimal gate charge, low rDS(ON), and swift switching speed, making it the go-to choice for designers seeking to elevate the overall efficiency of their power management solutions

Key Features

R_DS(ON) = 10 mΩ @ V_GS = 10V @ I_D = 11.6A
R_DS(ON) = 12mΩ @ V_GS = 4.5V @ I_D = 10.7A
High performance trench technology for extremely lowr_DS(ON)
Low gate charge
High power and current handling capability

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	11.6 A	Rds On - Drain-Source Resistance	10 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	30 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDS8880	Configuration	Single
Fall Time	15 ns	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	27 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	7 ns	Width	3.9 mm
Part # Aliases	FDS8880_NL	Unit Weight	0.004586 oz