This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FGD3N60UNDF +BOM

IGBT, 600V, 3A, Short Circuit Rated

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FGD3N60UNDF
Datasheet:

FGD3N60UNDF Datasheet (PDF)
IGBT Type:

NPT
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

6 A
Current - Collector Pulsed (Icm):

9 A
EDA/CAD Models:

Request Free CAD Models for FGD3N60UNDF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FGD3N60UNDF General Description

Fairchild’s FGD3N60UNDF features state-of-the-art NPT IGBT technology, guaranteeing the highest performance for low power inverter-driven applications. Its low-losses and short circuit ruggedness make it a top choice for applications where these features are critical. With advanced NPT IGBT technology, this product ensures superior efficiency and reliability in a variety of industrial and commercial applications

Key Features

Fully insulated leads
Compact size for space-saving
Epoxy resin encapsulation
High surge current capability
Low leakage current
UL and CE certified

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	NPT	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A	Current - Collector Pulsed (Icm)	9 A
Vce(on) (Max) @ Vge, Ic	2.52V @ 15V, 3A	Power - Max	60 W
Switching Energy	52µJ (on), 30µJ (off)	Input Type	Standard
Gate Charge	1.6 nC	Td (on/off) @ 25°C	5.5ns/22ns
Test Condition	400V, 3A, 10Ohm, 15V	Reverse Recovery Time (trr)	21 ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	FGD3N60