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FGL40N150D +BOM

Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

Key Features

  • High speed switching
  • Low saturation voltage : VCE(sat)= 3.5 V @ IC = 40A
  • High input impedance
  • Built-in fast recovery diode

Specifications

Source Content uid FGL40N150D Part Life Cycle Code Obsolete
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Collector Current-Max (IC) 40 A Collector-Emitter Voltage-Max 1500 V
Configuration SINGLE WITH BUILT-IN DIODE Fall Time-Max (tf) 300 ns
Gate-Emitter Thr Voltage-Max 7.5 V Gate-Emitter Voltage-Max 25 V
JEDEC-95 Code TO-264AA JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified Rise Time-Max (tr) 700 ns
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns Turn-on Time-Nom (ton) 450 ns

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