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FKI10531 +BOM

Power transistor with N-channel enhancement mode MOSFET technology, supporting up to 100V and 18A in a TO-220F package

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FKI10531 General Description

N-Channel 100 V 18A (Tc) 32W (Tc) Through Hole TO-220F

Key Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA)
  • ID ----------------------------------------------------------18 A
  • RDS(ON) -------- 54.5 mΩ max. (VGS = 10 V, ID = 11.9 A)
  • Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)
  • Low Total Gate Charge
  • High Speed Switching
  • Low On-Resistance
  • Capable of 4.5 V Gate Drive
  • 100 % UIL Tested
  • RoHS Compliant

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 48mOhm @ 11.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 25 V
Power Dissipation (Max) 32W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Through Hole

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