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FKV550N +BOM

Power Field-Effect Transistor, N-Channel Silicon, TO-220AB, 50A I(D), 50V, 0.015ohm

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FKV550N General Description

N-Channel 50 V 50A (Ta) 35W (Tc) Through Hole TO-220F

Key Features

  • Efficient power management
  • Compact design for space saving
  • Suitable for industrial control

Application

  • Cutting-edge aerospace tech
  • Innovative medical devices
  • Efficient telecommunications

Specifications

ECCN (US) EAR99 Part Status Active
Automotive No PPAP No
Category Power MOSFET Configuration Single
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 50 Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4.2 Maximum Continuous Drain Current (A) 50
Maximum Gate Source Leakage Current (nA) 10000 Maximum IDSS (uA) 100
Maximum Drain Source Resistance (mOhm) 15@10V Typical Input Capacitance @ Vds (pF) 2000@10V
Maximum Power Dissipation (mW) 35000 Maximum Operating Temperature (°C) 150
Mounting Through Hole PCB changed 3
Tab Tab Pin Count 3
Lead Shape Through Hole

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