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See Technical Specifications

FQD20N06TM +BOM

Power MOSFET, N-Channel, QFET®, 60 V, 16.8 A, 63 mΩ, DPAK

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FQD20N06TM
Datasheet:

FQD20N06TM Datasheet (PDF)
Case Outline:

369AS
MSL Temp (°C):

260
Container Type:

REEL
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for FQD20N06TM

Email: [email protected]

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Tel: +852 95804164

FQD20N06TM General Description

The FQD20N06TM is a highly efficient N-Channel power MOSFET designed using a unique planar stripe and DMOS technology. This specialized technology allows for a reduction in on-state resistance, ensuring superior switching performance and high avalanche energy strength. With these features, this MOSFET is ideal for various applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power systems

Key Features

Soft Shut Down Enabled
High Speed Switching
Low EMI Emissions

Application

Energy
Marine
Fashion

Specifications

Status	Last Shipments	Case Outline	369AS
MSL Temp (°C)	260	Container Type	REEL
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	16.8 A	Rds On - Drain-Source Resistance	63 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Series	FQD20N06
Configuration	Single	Fall Time	25 ns
Forward Transconductance - Min	10 S	Height	2.39 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	45 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	5 ns	Width	6.22 mm
Unit Weight	0.011640 oz