This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FQPF10N60C +BOM

Power MOSFET, N-Channel, QFET®, 600 V, 9.5 A, 730 mΩ, TO-220F

Manufacturer:

Onsemi
Mfr.Part #:

FQPF10N60C
Datasheet:

FQPF10N60C Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FQPF10N60C

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FQPF10N60C General Description

The FQPF10N60C is an N-Channel enhancement mode power field effect transistor that is manufactured using ON Semiconductor's advanced proprietary technology. This technology, known as planar stripe DMOS, has been specifically designed to minimize on-state resistance, improve switching performance, and withstand high energy pulses in avalanche and commutation modes. These features make the FQPF10N60C ideal for use in high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. With its superior capabilities, this transistor is sure to meet the demands of power systems that require efficient and reliable performance

Key Features

9.5 A, 600 V, R_DS(on) = 730 mΩ (Max.) @ V_GS = 10 V, I_D = 4.75 A
Low Gate Charge (Typ. 44 nC)
Low Crss (Typ. 18 pF)
100% Avalanche Tested

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	9.5 A
Rds On - Drain-Source Resistance	730 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	4 V	Qg - Gate Charge	44 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	50 W	Channel Mode	Enhancement
Series	FQPF10N60C	Configuration	Single
Fall Time	77 ns	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	69 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	144 ns
Typical Turn-On Delay Time	23 ns	Width	4.7 mm
Part # Aliases	FQPF10N60C_NL	Unit Weight	0.068784 oz