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IGBT, 1200V, NPT
TO-252-3Manufacturer:
Mfr.Part #:
HGTD1N120BNS9A
Datasheet:
Case Outline:
369AS
MSL Temp (°C):
260
Container Type:
REEL
Technology:
Si
EDA/CAD Models:
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The HGTD1N120BNS9A product is engineered with precision and expertise, featuring a Non-Punch Through(NPT) IGBT design that caters to the needs of high voltage switching applications. Its performance at moderate frequencies ensures optimal efficiency, making it a preferred choice for industries like UPS, solar inverter manufacturing, motor control systems, and power supply design. This product's ability to reduce conduction losses is a significant advantage in achieving peak performance in demanding environments
Status | Active | Case Outline | 369AS |
MSL Temp (°C) | 260 | Container Type | REEL |
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 5.3 A |
Pd - Power Dissipation | 60 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTD1N120BNS |
Continuous Collector Current | 5.3 A | Continuous Collector Current Ic Max | 5.3 A |
Gate-Emitter Leakage Current | +/- 250 nA | Height | 2.3 mm |
Length | 6.6 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 2500 | Subcategory | IGBTs |
Width | 6.1 mm | Unit Weight | 0.009184 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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