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IMH11AT110 +BOM

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

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IMH11AT110 General Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

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Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased Series -
Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz Power - Max 300mW
Mounting Type Surface Mount Base Product Number IMH11

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In Stock: 5,817

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.123 $0.62
50+ $0.109 $5.45
150+ $0.102 $15.30
500+ $0.078 $39.00
3000+ $0.075 $225.00
6000+ $0.073 $438.00

The prices below are for reference only.

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