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Silicon carbide power metal-oxide-semiconductor field-effect transistor
TO-247-3Manufacturer:
Mfr.Part #:
IMW65R048M1HXKSA1
Datasheet:
Series:
CoolSIC™ M1
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
650 V
EDA/CAD Models:
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The IMW65R048M1HXKSA1 GaN FET power transistor is a game-changer in high-performance applications, offering a remarkable low ON-resistance of 48 mΩ and a high breakdown voltage of 650 V. Its capabilities make it a versatile solution for a wide range of power switching applications, delivering exceptional performance in modern electronic systems. With the ability to operate at high frequencies, this transistor enables efficient power conversion, ensuring optimal functionality in electronic devices
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolSIC™ M1 |
FET Type | N-Channel | Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V | Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 6mA | Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
Vgs (Max) | +23V, -5V | Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
FET Feature | - | Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IMW65R048 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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