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IMBG65R048M1HXTMA1 +BOM

High-power electronics require reliable N-channel MOSFETs like IMBGRXT

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IMBG65R048M1HXTMA1 General Description

N-Channel 650 V 45A (Tc) 183W (Tc) Surface Mount PG-TO263-7-12

Infineon Technologies Corporation Inventory

Key Features

  • Low Q
  • rr
  • oss
  • Low switching losses
  • Commutation robust fast body diode
  • Leading trench technology with superior gate oxide reliability
  • Increased avalanche capability
  • SMD package for direct integration into PCB
  • Sense pin for optimized switching performance
  • High performance, high reliability and ease of use
  • Enable high system efficiency and power density
  • Reduces system cost and complexity
  • Enable cheaper, simpler and smaller systems
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies
Infineon Technologies Corporation Original Stock

Application

  • Server
  • Telecom
  • SMPS
  • Solar energy systems
  • Energy storage and battery formation
  • UPS
  • EV charging
  • Motor drives

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series CoolSiC™
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id 5.7V @ 6mA Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V
Vgs (Max) +23V, -5V Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V
FET Feature - Power Dissipation (Max) 183W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IMBG65 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 45 A
Rds On - Drain-Source Resistance 64 mOhms Vgs - Gate-Source Voltage - 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage 5.7 V Qg - Gate Charge 33 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 183 W Channel Mode Enhancement
Product MOSFET Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Part # Aliases IMBG65R048M1H SP005539172

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IMBG65R048M1HXTMA1 Datasheet PDF

Preliminary Specification IMBG65R048M1HXTMA1 PDF Download

IMBG65R048M1HXTMA1 PDF Preview

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