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MOSFET SILICON CARBIDE MOSFET
PG-TO263-7-12Manufacturer:
Mfr.Part #:
IMBG65R260M1HXTMA1
Datasheet:
Series:
CoolSIC™ M1
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
650 V
EDA/CAD Models:
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N-Channel 650 V 6A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolSIC™ M1 |
FET Type | N-Channel | Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V | Rds On (Max) @ Id, Vgs | 346mOhm @ 3.6A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 1.1mA | Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 18 V |
Vgs (Max) | +23V, -5V | Input Capacitance (Ciss) (Max) @ Vds | 201 pF @ 400 V |
FET Feature | - | Power Dissipation (Max) | 65W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IMBG65R | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.158 | $5.16 |
200+ | $1.997 | $399.40 |
500+ | $1.928 | $964.00 |
1000+ | $1.892 | $1,892.00 |
The prices below are for reference only.
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