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This TO-220AB MOSFET has a low on-state resistance of 8.4mΩ at 10V and 47A
TO-220-3Manufacturer:
Mfr.Part #:
IRF1018EPBF
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Factory Lead Time:
52 Weeks
EDA/CAD Models:
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Housed in a TO-220AB package, the IRF1018EPBF strikes a good balance between thermal performance and ease of mounting. With a wide operating temperature range of -55°C to 175°C, this MOSFET is designed to withstand harsh environmental conditions, making it a versatile and dependable choice for a variety of applications
Source Content uid | IRF1018EPBF | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Avalanche Energy Rating (Eas) | 88 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 79 A |
Drain-source On Resistance-Max | 0.0084 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 110 W | Pulsed Drain Current-Max (IDM) | 315 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 79 A |
Rds On - Drain-Source Resistance | 7.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 46 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 110 W | Channel Mode | Enhancement |
Height | 15.65 mm | Length | 10 mm |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 4.4 mm | Unit Weight | 0.068784 oz |
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