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IRF1404SPBF +BOM

Tube packaging for IRF1404SPBF MOSFET

IRF1404SPBF General Description

The IRF1404SPBF Power MOSFET transistor stands as a formidable force in the realm of high-power electronics, boasting a robust 40V voltage rating and an impressive 202A continuous drain current capacity. With a mere 3.5 mOhm on-state resistance, this MOSFET flexes its efficiency muscles, delivering power with minimal losses and maximizing performance in demanding applications. Housed in a TO-262 package, this transistor is built to withstand the rigors of challenging environments while maintaining optimal thermal performance for peak operation

Specifications

Source Content uid IRF1404SPBF Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE Avalanche Energy Rating (Eas) 519 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.004 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 650 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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