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See Technical Specifications

IRF2807 +BOM

TO-220AB N-Channel MOSFET Transistor

Manufacturer:

Infineon
Mfr.Part #:

IRF2807
Datasheet:

IRF2807 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF2807

IRF2807 General Description

With the IRF2807, designers can confidently tackle a variety of applications knowing that they have a dependable and efficient power MOSFET at their disposal. Its wide portfolio of devices and industry-standard packages make it a popular choice among engineers looking for a reliable solution for their power management needs. Whether you're working on a new project or upgrading an existing system, the IRF2807 is a versatile and reliable component that will meet your requirements

Key Features

N-channel power MOSFET with excellent dynamic performance
Low gate charge and high current handling capability
Designed for high-reliability applications such as industrial controls

Compact package for reduced board space
Operating frequency up to 100 kHz for efficient control

Application

Power supplies
Battery chargers
Industrial automation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	82 A	Rds On - Drain-Source Resistance	13 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	230 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	48 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	64 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	49 ns
Typical Turn-On Delay Time	13 ns	Width	4.4 mm
Unit Weight	0.068784 oz