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IRF2807S +BOM

Plastic D2PAK-3 package for easy installation and handling

Manufacturer:

INFINEON
Mfr.Part #:

IRF2807S
Datasheet:

IRF2807S Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
HTS Code:

8541.29.00.95
EDA/CAD Models:

Request Free CAD Models for IRF2807S

IRF2807S General Description

Step into the realm of high-efficiency power switching with the IRF2807S power MOSFET. Engineered to handle drain-to-source voltages of up to 75 volts and continuous drain currents of 82 amperes, this N-channel device is your go-to solution for power conversion and motor control applications. Its impressively low on-resistance of 8 milliohms paves the way for minimized power wastage and superior efficiency in high-power circuits. Furthermore, the IRF2807S showcases a modest 73nC gate charge, guaranteeing swift switching speeds and flawless high-frequency operation. Packaged in a TO-263 enclosure, this MOSFET promises outstanding thermal conductivity and rugged reliability, ensuring peak performance even in the most demanding conditions. Plus, its RoHS compliance underscores its eco-friendly design, making it a versatile and sustainable choice for a wide range of applications

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	Avalanche Energy Rating (Eas)	340 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	75 V	Drain Current-Max (ID)	75 A
Drain-source On Resistance-Max	0.013 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	225
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	150 W
Pulsed Drain Current-Max (IDM)	280 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON