This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRF2807ZS +BOM

TO-263AB Plastic D2PAK-3 packaging

Manufacturer:

INFINEON
Mfr.Part #:

IRF2807ZS
Datasheet:

IRF2807ZS Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Models:

Request Free CAD Models for IRF2807ZS

IRF2807ZS General Description

When it comes to applications requiring ruggedness and reliability, the IRF2807ZS from the StrongIRFET™ family stands out as a top choice. This power MOSFET is engineered to offer superior performance while handling high currents with ease. From inverters to DC-DC converters, this device is versatile and dependable for a wide range of power management needs

Key Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	200 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	75 V
Drain Current-Max (ID)	75 A	Drain-source On Resistance-Max	0.0094 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	350 A
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON