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Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
TO-220-3Manufacturer:
Mfr.Part #:
IRF3711PBF
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Avalanche Energy Rating (Eas):
460 mJ
EDA/CAD Models:
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The IRF3711PBF is a Power MOSFET designed for high-power applications. It is a N-channel MOSFET with a drain-source voltage rating of 20V and a continuous drain current of 57A. The MOSFET has a low on-resistance of 14.5mΩ, making it suitable for applications where low power loss and high efficiency are important.The IRF3711PBF has a gate threshold voltage of 2V and a gate-source voltage rating of ±20V. It features a fast switching speed and a high pulse current capability, making it suitable for applications that require high-speed switching.The MOSFET is housed in a TO-220AB package, which provides good thermal conduction and mechanical strength. It is RoHS compliant and halogen-free, making it environmentally friendly.
Source Content uid | IRF3711PBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 460 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 110 A | Drain-source On Resistance-Max | 0.006 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 120 W |
Pulsed Drain Current-Max (IDM) | 440 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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