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Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
I2PAK (TO-262)Manufacturer:
Mfr.Part #:
IRF4905L
Datasheet:
Part Life Cycle Code:
Transferred
Pin Count:
3
ECCN Code:
EAR99
Additional Feature:
HIGH RELIABILITY
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The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Part Life Cycle Code | Transferred | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | Avalanche Energy Rating (Eas) | 930 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 V | Drain Current-Max (ID) | 74 A |
Drain-source On Resistance-Max | 0.02 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-262AA | JESD-30 Code | R-PSIP-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 200 W | Pulsed Drain Current-Max (IDM) | 260 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN LEAD | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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