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IRF5210SPBF +BOM
The IRF5210SPBF is a P-Channel MOSFET known for its -100V voltage rating
TO-252-3-
Manufacturer:
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Mfr.Part #:
IRF5210SPBF
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Datasheet:
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Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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Additional Feature:
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
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EDA/CAD Models:
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Availability: 5817 PCS
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IRF5210SPBF General Description
P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK
Key Features
- Advanced Process Technology
- Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free
Specifications
Source Content uid | IRF5210SPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | Avalanche Energy Rating (Eas) | 120 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 38 A |
Drain-source On Resistance-Max | 0.06 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 170 W |
Pulsed Drain Current-Max (IDM) | 140 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN OVER NICKEL |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 5,817
Minimum Order: 1
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