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IRF5210SPBF +BOM

The IRF5210SPBF is a P-Channel MOSFET known for its -100V voltage rating

IRF5210SPBF General Description

P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK

Key Features

  • Advanced Process Technology
  • Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free

Specifications

Source Content uid IRF5210SPBF Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.06 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 140 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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