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IRF5810 +BOM

IRF5810 is a small signal P-Channel silicon FET with a 2-Element design capable of handling 2.9A current and operating at 20V

IRF5810 General Description

Mosfet Array 20V 2.9A 960mW Surface Mount 6-TSOP

Specifications

Source Content uid IRF5810 Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.9 A Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6 JESD-609 Code e0
Moisture Sensitivity Level 2 Number of Elements 2
Number of Terminals 6 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.96 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN LEAD
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON

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