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See Technical Specifications

IRF5810TRPBF +BOM

MOSFT technology

Manufacturer:

INFINEON
Mfr.Part #:

IRF5810TRPBF
Datasheet:

IRF5810TRPBF Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 P-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

20V
EDA/CAD Models:

Request Free CAD Models for IRF5810TRPBF

IRF5810TRPBF General Description

The IRF5810TRPBF MOSFET boasts a dual P-channel configuration and is rated for a drain-source voltage (Vds) of -20V, allowing for robust performance in various electronic applications. Its continuous drain current (Id) capability of -2.9A ensures reliable operation under moderate to heavy loads. With an on-resistance (Rds(on)) of 90mohm at a test voltage (Vgs) of -4.5V, this MOSFET minimizes power dissipation and enhances overall efficiency. Housed in a TSOP-6 package, it offers space-saving benefits without compromising performance. Furthermore, its compliance with RoHS regulations underscores its commitment to environmental sustainability, making it an ideal choice for eco-conscious designs

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.9A	Rds On (Max) @ Id, Vgs	90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 16V	Power - Max	960mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount