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IRF5M5210 +BOM

100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package

IRF5M5210 General Description

The IRF5M5210 is a single-element transistor with P-Channel polarity, making it suitable for use in various switching and amplification circuits. Its Silicon construction offers superior performance and durability compared to traditional components, while the Metal-oxide Semiconductor FET technology provides fast switching speeds and low gate drive requirements

Key Features

Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight

Specifications

Pbfree Code No Part Life Cycle Code Transferred
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 520 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.07 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA JESD-30 Code S-MSFM-P3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 136 A Qualification Status Not Qualified
Surface Mount NO Terminal Form PIN/PEG
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
ID max -34.0 A Polarity P
VBRDSS min -100.0 V RDS (on) max 70.0 mΩ
Language SPICE Download Model https://www.infineon.com/cms/dgdl/Infineon-Spice_File_IRF5M5210-SimulationModels-v01_01-EN.spi?fileId=8ac78c8c84f2c0670184f4e685350de2
Product Category High reliability power MOSFETs

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