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See Technical Specifications

IRF6216TRPBF +BOM

SOIC-8 Mounted Single P-Channel HEXFET® Power MOSFET - 150V, 240mΩ, 33nC Charge

Manufacturer:

INFINEON
Mfr.Part #:

IRF6216TRPBF
Datasheet:

IRF6216TRPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for IRF6216TRPBF

IRF6216TRPBF General Description

The IRF6216TRPBF is a P Channel MOSFET transistor capable of handling a drain source voltage of -150V and a continuous drain current of -2.2A. With an on resistance of 240mohm and a test voltage of -10V, this transistor is suitable for a variety of applications requiring efficient power management

Application

SWITCHING

Specifications

Source Content uid	IRF6216TRPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	2.2 A	Drain-source On Resistance-Max	0.24 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON