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See Technical Specifications

IRF630NS +BOM

200V maximum voltage rating

Manufacturer:

INFINEON
Mfr.Part #:

IRF630NS
Datasheet:

IRF630NS Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Models:

Request Free CAD Models for IRF630NS

IRF630NS General Description

The IRF630NS power MOSFET transistor stands out for its remarkable specifications, including a drain-source voltage (VDS) rating of 200V and a continuous drain current (ID) rating of 9.3A. Its low on-resistance (RDS(on)) of 0.320 ohms plays a pivotal role in reducing power losses and enhancing efficiency, making it an ideal option for high-performance applications requiring superior power density

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	94 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	9.3 A	Drain-source On Resistance-Max	0.3 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	225	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	37 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON