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IRF6609 +BOM

0V N-Channel 2.0 milliohm HEXFET 46 nanocoulombs

Manufacturer:

Infineon
Mfr.Part #:

IRF6609
Datasheet:

IRF6609 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRF6609

IRF6609 General Description

The IRF6609 is a superior 20V N-channel HEXFET power MOSFET engineered for high-performance applications. Rated at 150 amperes and optimized for low on-resistance, this power MOSFET is perfect for active OR'ing and similar tasks. It is supplied in the DirectFET MT package and is only available in Tape and Reel packaging. Customers should be aware that bulk ordering is not an option for this product

Key Features

Compact and reliable design
Low power consumption
Fault-tolerant operation

Application

Energy-efficient solutions
Electric vehicle charging
Load management systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	31 A	Rds On - Drain-Source Resistance	2.6 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	46 nC
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	89 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	9.8 ns
Height	0.7 mm	Length	6.35 mm
Moisture Sensitive	Yes	Product Type	MOSFET
Rise Time	95 ns	Factory Pack Quantity	4800
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	HEXFET Power MOSFET	Typical Turn-Off Delay Time	26 ns
Typical Turn-On Delay Time	24 ns	Width	5.05 mm
Part # Aliases	SP001523768	Unit Weight	0.017637 oz