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IRF7105TRPBF +BOM

SOIC Packaged N-Channel and P-Channel MOSFET, 25V, 3.5A/2.3A, Tape and Reel

IRF7105TRPBF General Description

Whether you're designing a high-speed switching circuit or a low voltage application, the IRF7105TRPBF is an excellent choice for demanding requirements. Its combination of high power rating, low on-resistance, and fast switching speed makes it a versatile and reliable component for a variety of applications. Plus, its RoHS compliance and efficient DPAK package make it a responsible and practical choice for environmentally friendly designs

Key Features

  • High-performance power management
  • Surface mount solution for low voltage apps
  • MOSFET transistor with high current handling
  • Efficient energy transmission guaranteed
  • Low on-resistance for reduced power loss
  • Compact package for space-constrained designs

Application

  • For efficient power management
  • Reliable battery chargers
  • Compact DC-DC converters
  • High-performance embedded systems
  • Precise motor control applications
  • Advanced switching power supplies

Specifications

Source Content uid IRF7105TRPBF Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Additional Feature ULTRA LOW RESISTANCE
Application SWITCHING Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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