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See Technical Specifications

IRF7317TRPBF +BOM

MOSFET for applications requiring VDS <= 40V

Manufacturer:

INFINEON
Mfr.Part #:

IRF7317TRPBF
Datasheet:

IRF7317TRPBF Datasheet (PDF)
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRF7317TRPBF

IRF7317TRPBF General Description

Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 58 / Gate-Source Voltage V = 12 / Fall Time ns = 49 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 22 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

Specifications

Source Content uid	IRF7317TRPBF	Part Life Cycle Code	End Of Life
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Application	SWITCHING	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON